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PJP730 / PJF730
400V N-Channel Enhancement Mode MOSFET
FEATURES
* 5.5A , 400V, RDS(ON)=0.95@VGS=10V, ID=3.0A * * * * * * Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
1
2 G
3 D
S
1
2 G
3 S D
MECHANICAL DATA
* Case: TO-220AB / ITO-220AB Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP730 PJF730
MARKING
P730 F730
PACKAGE
TO-220AB ITO-220AB
PACKING
Gate
50PCS/TUBE 50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R J C R J A
PJP730 400 +3 0 5 .5 22 87 0 .7
PJF730
Uni ts V V
5 .5 22 50 0 .4
A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0 303 1 .4 3 6 2 .5 2 .5 100
O
C
Avalanche Energy with Single Pulse
IAS=5.7A, VDD=50V, L=16.5mH
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
O
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
PAGE . 1
PJP730 / PJF730
ELECTRICAL CHARACTERISTICS
( TA=25OC unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V D SS V GS (th) R D S (o n) I DSS I GS S
V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 3A VDS=400V, VGS=0V V GS =+3 0 V, V D S =0 V
400 2 .0 -
0.9 -
4 .0 0.95 10 +1 0 0
V V uA n
Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q
gd
-
1 6 .8 3 .4 7.2 10.7 15.6 2 4 .4 1 5 .6 560 69 6.2
16 18 ns 36 22 680 85 7.8 pF nC
V D S =3 2 0 V, ID =5 .5 A V GS =1 0 V
-
t d (o n) tr t d (o ff) tf C C C
i ss
VDD=200V , I D =5.5A VGS=10V , RG=12
-
o ss
V D S =2 5 V, V GS =0 V f=1 .0 MH Z
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS I SM V SD t rr Q
rr
IS =5 .5 A , V GS =0 V V GS =0 V, IF =5 .5 A d i /d t=1 0 0 A /us
-
220 2 .0
5 .5 22 1 .5 -
A A V ns uC
Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e
NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
STAD-NOV.24.2009
PAGE . 2

PJP730 / PJF730
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
ID - Drain-to-Source Current (A)
12 11 10 9 8 7 6 5 4 3 2 1 0 5
6.0V
ID - Drain Source Current (A)
VGS= 20V~ 7.0V
VDS =50V
10
TJ = 125oC
1
25oC -55oC
5.0V
0.1 10 15 20 25 30 2
VDS - Drain-to-Source Voltage (V)
3 4 5 6 7 VGS - Gate-to-Source Voltage (V)
8
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7
1.4 RDS(ON) - On-Resistance ( ) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6
RDS(ON) - On-Resistance ( )
ID =3A
VGS=10V VGS = 20V
TJ =25oC
0
2
4
6
8
10
12
2
ID - Drain Current (A)
4 6 8 VGS - Gate-to-Source Voltage (V)
10
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On Resistance(Normalized)
2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5
1000
C - Capacitance (pF)
VGS =10 V ID =3.0A
800 600 400 200 0 Crss 0 5 10 15 20 Ciss
f = 1MHz VGS = 0V
Coss
-50
-25
0
25
50
75
100
125
150
25
30
TJ - Junction Temperature (oC)
VDS - Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
Fig.6 Capacitance
PAGE. 3
PJP730 / PJF730
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
VGS - Gate-to-Source Voltage (V)
12 10 8 6 4 2 0 0 4 8 12 16 20
100 VDS=320V VDS=200V VDS=80V
IS - Source Current (A)
ID =5.5A
VGS = 0V
10 TJ = 125oC
1
25oC -55oC
0.1
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4
Qg - Gate Charge (nC)
VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.2
BVDSS - Breakdown Voltage(NORMALIZED)
Fig.8 Source-Drain Diode Forward Voltage
ID = 250A
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJP730 / PJF730
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm, Br+Cl<1000ppm,Sb2O3<100ppm.
2. If your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.

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